MJD117 Overview
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. TAB 3 1 TO-252 (DPAK) Figure 1.
Key Features
- Good hFE linearity
- High fT frequency
| Part | MJD117 |
|---|---|
| Description | Complementary power Darlington transistor |
| Category | Transistor |
| Manufacturer | STMicroelectronics |
| Size | 379.29 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MJD117 | Inchange Semiconductor | Silicon PNP Power Transistor |
| MJD117 | JCET | PNP Transistor |
| MJD117L | KEC | EPITAXIAL PLANAR PNP TRANSISTOR |
| MJD117 | Fairchild Semiconductor | PNP Silicon Darlington Transistor |
| MJD117 | Continental Device India | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |