Part MJD117
Description Epitaxial Planar PNP Transistor
Category Transistor
Manufacturer Galaxy Microelectronics
Size 221.35 KB
Galaxy Microelectronics

MJD117 Overview

Key Features

  • High DC Current Gain
  • Built-in a Damper Diode at E-C. Pb Lead-free
  • Lead Formed for Surface Mount Applications
  • Straight Lead
  • 100 V VCEO Collector-Emitter Voltage
  • 100 V VEBO Emitter-Base Voltage
  • 5 V IC Collector Current
  • 2 A ICP Collector Power Dissipation
  • 4 A IB Base Current
  • 50 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range