• Part: MJD112
  • Description: Epitaxial Planar NPN Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 202.87 KB
Download MJD112 Datasheet PDF
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Datasheet Summary

Epitaxial Planar NPN Transistor Features - High DC Current Gain. - Built-in a Damper Diode at E-C. Pb Lead-free - Lead Formed for Surface Mount Applications. - Straight Lead. - MSL 3. Production specification TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current 2A ICP Collector Power...