MJD112 Overview
Key Features
- High DC Current Gain
- Built-in a Damper Diode at E-C. Pb Lead-free
- Lead Formed for Surface Mount Applications
- Straight Lead
- 55 to +150 ℃ V/(W)025 Rev.A 1 Production specification Epitaxial Planar NPN Transistor MJD112
| Part | MJD112 |
|---|---|
| Description | Epitaxial Planar NPN Transistor |
| Category | Transistor |
| Manufacturer | Galaxy Microelectronics |
| Size | 202.87 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MJD112 | Fairchild Semiconductor | NPN Silicon Darlington Transistor |
| MJD112 | Micro Commercial Components | Silicon NPN epitaxial planer Transistors |
| MJD112 | Continental Device India | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
| MJD112 | Micro Commercial Components | NPN Transistor |
| MJD112 | onsemi | Complementary Darlington Power Transistor |