Datasheet4U Logo Datasheet4U.com

MJD112 - Epitaxial Planar NPN Transistor

Key Features

  • High DC Current Gain.
  • Built-in a Damper Diode at E-C. Pb Lead-free.
  • Lead Formed for Surface Mount.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJD112 Silicon NPN transistor BLUE ROCKET ELECTRONICS
MJD112 Silicon NPN epitaxial planer Transistors MCC
MJD112 Silicon NPN Power Transistor Inchange Semiconductor
MJD112 NPN Silicon Darlington Transistor Fairchild Semiconductor
MJD112 COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS CDIL

Other Datasheets by Galaxy Microelectronics

Part Number Description
MJD117 Epitaxial Planar PNP Transistor
MJD122 Epitaxial Planar NPN Transistor
MJD127 Epitaxial Planar PNP Transistor
MJD2955 Epitaxial Planar NPN Transistor
MJD3055 Epitaxial Planar NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  MSL 3. Production specification MJD112 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current 2A ICP Collector Power Dissipation 4A IB Base Current 50 mA PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)025 Rev.A www.gmesemi.