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MJD117 - Silicon PNP Power Transistor

General Description

High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK,“－I”suffix) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature -4 A 1.