| Part number | MJD112 |
|---|---|
| Download | MJD112 Datasheet (PDF) |
| File Size | 257.64 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Micro Commercial Components |
MJD112 | Silicon NPN epitaxial planer Transistors |
Fairchild |
MJD112 | NPN Silicon Darlington Transistor |
Continental Device India |
MJD112 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
JCET |
MJD112 | NPN Transistor |
Galaxy Microelectronics |
MJD112 | Epitaxial Planar NPN Transistor |
·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN...
