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MJD112 - Silicon NPN Power Transistor

General Description

High DC current gain Lead formed for surface mount applications(NO suffix) Straight lead(IPAK,“－I”suffix) Built-in a damper diode at E-C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.