MJD117 - EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Key Features

High DC Current Gain. : hFE=1000(Min. ), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L.

MJD117 epitaxial planar pnp transistor by KEC - Datasheet Preview

Datasheet Details

Part number	MJD117
Manufacturer	KEC
File Size	392.56 KB
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet	MJD117 Datasheet

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Other Datasheets by KEC

Part Number	Description
MJD117L	EPITAXIAL PLANAR PNP TRANSISTOR
MJD112	EPITAXIAL PLANAR NPN TRANSISTOR
MJD112L	EPITAXIAL PLANAR NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -100 -100 -5 -2 -4 -50 1.0 20 150 -55 150 UNIT V V V A mA W C B Q A C H FF 123 1. BASE 2. COLLECTOR 3.