MJD112
MJD112 is NPN Transistor manufactured by JCET.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
TRANSISTOR (NPN) yFeatures plementary Darlington Power Transistors Dpak for Surface Mount Applications
TO-251-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
2A
PC Collector Power Dissipation
1W
RθJC
Thermal resistance, junction to case
6.25 ℃/W
RθJA
Thermal resistance, junction to Ambient
71.4 ℃/W
TJ Junction Temperature
150...
