JCET MJD112
NPN Transistor
| Part No. | MJD112 |
|---|---|
| Datasheet | MJD112 Download |
| Manufacturer |  JCET |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTERMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 2A PC Collector Power Dissipation 1W RθJC Thermal resistance, junction to case 6.25 ℃/W RθJA Thermal resistance, junction to Ambient 71.4 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current D
