Fairchild Semiconductor MJE13009
NPN Silicon Transisor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : MJE13008 : MJE13009 VCEO Collector-Emitter Voltage : MJE13008 : MJE13009 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 700 300 400 9 12 24 6 100 150 - 65 ~ 150 Units V V V V V A A A W °C °CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) Collector-Emitter Sustaining Voltage : MJE13008 : MJE13009 IC = 10mA, IB = 0 IEBO hFE VCE(sat) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage VBE (sat) * Base-Emitter Saturation Voltage