Fairchild Semiconductor MPS8050
NPN General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS
* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 25 40 6.0 1.0 -55 to +150 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPS8050 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPS8050 NPN General Purpose Amplifier (continued) Electrical C...