National Semiconductor MPS8050
NPN General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS
* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 25 VCBO Collector-Base Voltage 40 VEBO Emitter-Base Voltage 6.0 IC Collector Current - Continuous 1.0 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPS8050 625 5.0 83.3 200 Units V V V A °C Units mW mW/°C °C/W °C/W MPS8050ELECTRICAL CHARACTERISTICS
Symbol Parameter NPN General Purpose Amplifier (continued) TA = 25°C un...