KEC MPS8050
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
ELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) hFE(2) (Note) hFE(3) VCE(sat) VBE(sat) VBE fT Cob VCB=35V, IE=0 VEB=6V, IC=0 IC=100ỌA, IE=0 IC=2mA, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz, IE=0 Note : hFE(2) Classification B:85ᴕ160 , C : 120ᴕ200 , D : 160ᴕ300 MIN. 40 25 45 85 40 - 100 - TYP. - 135 160 110 0.28 0.98 0.66 190 9 MAX. 100 100 300 0.5 1.2 1.0 - UNIT nA nA V V V V V MHz pF 1999. 10. 25 Revision No : 1 1/2 COLLECTOR CURRENT I C (mA) MPS8050 I C - VCE 0.5 I B=3.0mA 0.4 I B=2.5mA 0.3 I B=2.0mA 0.2 I B=1.5mA I B=1.0mA 0.1 I B=0.5mA 0 0 0.4 0.8 1.2 1.6 2...