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MTD3055VL - N-Channel MOSFET

General Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V • Critical DC electrical parameters specified at elevated temperature. • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronou.

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www.DataSheet4U.com MTD3055VL August 1999 DISTRIBUTION GROUP* MTD3055VL General Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V • Critical DC electrical parameters specified at elevated temperature. • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.