Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
- 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V Critical DC electrical parameters specified at elevated temperature. Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronou.