NZT753 Datasheet | Fairchild Semiconductor

PNP Current Driver Transistor - This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings- TA=25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage - 100 VCBO Collector-Base Voltage - 120 VEBO Emitter-Base Voltage - 5.0 Collector Current - Continuous - 4.0 TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current IEBO Emitter-Base Cutoff Current On Characteristics - IC = -10m A, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCB = -100V, IE = 0 TA = 100°C VEB = -4V, IC = 0 h FE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation...