NZT753 Datasheet | onsemi

DATA SHEET .onsemi. PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. 1. Base 2. Collector 3. Emitter 3 2 1 SOT- 223 CASE 318H ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) (Notes 1, 2) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, TSTG Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range - 100 - 120 - 5.0 - 4.0 - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted.) (Note 3) Symbol Parameter Max Unit Total Device Dissipation Derate above 25C 9.7 m W/C Rq JA Thermal Resistance, Junction to...