NZT753 Datasheet | Kexin Semiconductor

Features PNP Current Driver Transistor NZT753 SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO IC TJ, TSTG RèJA Rating -100 -120 -5 -4 - 55 to +150 1.2 9.7 103 Unit V V V A W m W/ /W Electrical Characteristics Ta = 25 unless otherwise stated Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Transition Frequency Symbol BVCEO BVCBO BVEBO ICBO IEBO h FE VCE(sat) VBE(sat) VBE(on) f T Testconditons IC = -10m A, IB = 0 IC = -100ìA, IE = 0 IE = -100ìA, IC = 0 VCB = -100V, IE = 0 TA = 100 VEB = -4V, IC = 0 VCE = -2.0V, IC = -50m A VCE = -2.0V, IC = -500m A VCE = -2.0V, IC = -1.0A IC = -1.0A, IC = -50m A IC = -1.0A, IB = -100m A VCE = -2.0V, IC = -1.0A, VCE = -5V, IC = -100m A, f = 100MHz - Pulse Test: Pulse Width 300ìs, Duty Cycle...