Datasheet4U Logo Datasheet4U.com

PN3563 - NPN RF Amplifier

📥 Download Datasheet

Datasheet preview – PN3563

Datasheet Details

Part number PN3563
Manufacturer Fairchild Semiconductor
File Size 77.23 KB
Description NPN RF Amplifier
Datasheet download datasheet PN3563 Datasheet
Additional preview pages of the PN3563 datasheet.

📁 Similar Datasheet

  • PN3563 - Small Signal Transistors (Central Semiconductor Corp)
  • PN3564 - Small Signal Transistors (Central Semiconductor Corp)
  • PN3565 - PNP SILICON TRANSISTOR (Micro Electronics)
  • PN3565 - Small Signal Transistors (Central Semiconductor Corp)
  • PN3566 - Small Signal Transistors (Central Semiconductor Corp)
  • PN3567 - NPN SILICON TRANSISTOR (Micro Electronics)
  • PN3567 - Small Signal Transistors (Central Semiconductor Corp)
  • PN3568 - NPN SILICON TRANSISTOR (Micro Electronics)
  • PN3568 - Small Signal Transistors (Central Semiconductor Corp)
  • PN3569 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR (Micro Electronics)
Other Datasheets by Fairchild Semiconductor
  • PN3565 - NPN General Purpose Amplifier
  • PN3566 - NPN General Purpose Amplifier
  • PN3567 - NPN General Purpose Amplifier
  • PN3568 - NPN General Purpose Amplifier
  • PN3569 - NPN General Purpose Amplifier
  • PN3638 - PNP General Purpose Amplifier
  • PN3638A - PNP General Purpose Amplifier
  • PN3640 - PNP Switching Transistor

Full PDF Text Transcription

Click to expand full text
PN3563 Discrete POWER & Signal Technologies PN3563 C BE TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 30 2.0 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
Published: |