PN3569 Datasheet | Fairchild Semiconductor

NPN General Purpose Amplifier - This device is designed for use at general purpose amplifiers and switches requiring collecor currents to 300m A. TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings- Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 80 5.0 500 - 55 ~ 150 Units V V V m A °C - These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO h FE VCE(sat) VBE(on) hfe Parameter Test Condition IC = 30µA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, IE = 0 VEB = 4.0V, IC = 0 VCE = 1V, IC = 150m A VCE = 1V, IC = 30m A IC = 150m A, IB = 15m A IC = 150m A, VCE = 1V IC = 50m A, VCE = 10V, f = 10MHz 3.0 100 100 Min. 40 80 5.0 50 25 300 0.25 1.1 30 V V V n A n A Max. Units V Collector-Emitter Sustaining Voltage - Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Small Signal current Gain On Characteristics Small Signal Characteristics - Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units m W m W/°C °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, November 2003 Package Dimensions TO-92...