PN3567 Datasheet | Fairchild Semiconductor

NPN General Purpose Amplifier - This device is for use as a medium amplifier and switch requiring collector currents up 300m A. - Sourced from process 19. TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 80 5 600 - 55 ~ 150 Units V V V m A °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition IC = 30m A, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 75°C VEB = 4V, IC = 0 VCE = 1V, IC = 150m A VCE = 1V, IC = 30m A IC = 150m A, IB = 15m A VCE = 1V, IC = 150m A VCB = 10V, IE = 0 VEB = 0.5V, IC = 0 40 40 Min. 40 80 5 50 5 25 120 0.25 1.1 20 80 V V p F Typ. Max. Units V V V n A µA n A Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage - V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current On Characteristics h FE DC Current Gain VCE(sat) VBE(on) Collector-Emitter Saturation Voltage - Base-Emitter On Voltage Small Signal Characteristics Cobo Output Capacitance Cibo Input Capacitance - Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA RθJC Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Max. 625 5 83.3 200 Units m W m W/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 Package Dimensions TO-92 - 0.15 +0.25 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] - 0.05 +0.10 3.86MAX 1.02...