Fairchild Semiconductor RF1S70N06
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.| Part No. | RF1S70N06 |
|---|---|
| Datasheet | RF1S70N06 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 70A, 60V● rDS(on) = 0.014Ω
● Temperature Compensated PSPICE Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve (Single Pulse)
● +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL)
DESCRIPTION
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG70N06 RFP70N06 RF1S70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 F1S70N06 DRAIN (FLANGE) A JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Formerly developmental type TA49007. Symbol D JEDEC TO-263AB M A A G GATE SOURCE S DRAIN (FLANGE)ABSOLUTE MAXIMUM RATINGS
TC = +25oC, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
