RF1S70N06SM - N-Channel Enhancement-Mode Power MOSFETs

This page provides the datasheet information for the RF1S70N06SM, a member of the RF1S70N06 N-Channel Enhancement-Mode Power MOSFETs family.

Product Overview

Harris

Part number	RF1S70N06SM
Manufacturer	Harris
File Size	65.85 KB
Description	N-Channel Enhancement-Mode Power MOSFETs
Datasheet	RF1S70N06SM Datasheet
Additional preview pages of the RF1S70N06SM datasheet.

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

70A, 60V.
rDS(on) = 0.014Ω.
Temperature Compensated PSPICE Model.
Peak Current vs Pulse Width Curve.
UIS Rating Curve (Single Pulse).
+175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE.

RF1S70N06SM - 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs (Fairchild Semiconductor)
RF1S70N06SM - 70A/ 60V/ 0.014 Ohm/ N-Channel Power MOSFETs (Intersil Corporation)
RF1S70N06 - 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs (Fairchild Semiconductor)
RF1S70N03 - N-Channel Power MOSFETs (Fairchild Semiconductor)
RF1S70N03SM - N-Channel Power MOSFETs (Fairchild Semiconductor)
RF1S70N03SM - 70A/ 30V/ 0.010 Ohm/ N-Channel Power MOSFETs (Intersil Corporation)
RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs (Fairchild Semiconductor)
RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs (Intersil Corporation)
RF1S25N06 - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs (Fairchild Semiconductor)
RF1S25N06SM - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs (Fairchild Semiconductor)

Other Datasheets by Harris

Published: Nov 28, 2014 |