RF1S70N06SM
RF1S70N06SM is 70A/ 60V/ 0.014 Ohm/ N-Channel Power MOSFETs manufactured by Intersil.
feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49007.
Features
- 70A, 60V
- r DS(on) = 0.014Ω
- Temperature pensated PSPICE® Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve (Single Pulse)
- 175o C Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
Ordering Information
PART NUMBER RFG70N06 RFP70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06
Symbol
NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
4-474
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of Micro Sim Corporation. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999
RFG70N06, RFP70N06, RF1S70N06SM
Absolute Maximum Ratings
TC = 25o C, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06SM 60 60 70 Refer to Peak Current Curve ±20 Refer to UIS Curve 150 1.0 -55 to 175 300 260 UNITS V V A V A W W/o C o C o C o C
Drain to Source Voltage (Note 1)
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- - . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1)
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- - . . . . VDGR Continuous Drain Current
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- -
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- - . . ID Pulsed Drain Current (Note 3)
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