RF1S70N06SM Datasheet | Fairchild Semiconductor

Features - 70A, 60V - r DS(on) = 0.014Ω - Temperature pensated PSPICE Model - Peak Current vs Pulse Width Curve - UIS Rating Curve (Single Pulse) - +175o C Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG70N06 RFP70N06 RF1S70N06 RF1S70N06SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG70N06 RFP70N06 F1S70N06 F1S70N06 DRAIN (FLANGE) JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Formerly developmental type TA49007. Symbol JEDEC TO-263AB G GATE SOURCE S DRAIN (FLANGE) Absolute Maximum Ratings TC = +25o C, Unless Otherwise Specified RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM Drain Source Voltage - - - - - - - - . . . VDSS Drain Gate Voltage- - - - - - - - - VDGR Gate Source Voltage - - - - - - - - . . . . VGS Drain Current RMS Continuous -...