RFG60P05E Overview
Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits. Formerly developmental type TA09835. Features • 60A, 50V • rDS(ON) = 0.030Ω • Temperature pensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information D When ordering, use the entire part number. G S DataShee . Packaging JEDEC STYLE...
RFG60P05E Key Features
- 60A, 50V
- rDS(ON) = 0.030Ω
- Temperature pensating PSPICE® Model
- 2kV ESD Rated
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- 175oC Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
