SFH154
SFH154 is Advanced Power MOSFET manufactured by Fairchild Semiconductor.
FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150 C Operating Temperature s Lower Leakage Current : 10 µA (Max.) @ VDS = 150V s Lower RDS(ON) : 0.064 Ω (Typ.) o
BVDSS = 150 V RDS(on) = 0.075 Ω ID = 34 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds o o o
Value 150 34 21.6
①
Units V A A V m J A m J V/ns W W/ C o
136 ±30 867 34 20.4 5.0 204 1.63
- 55 to +150
② ① ① ③ o
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.61 -40 o
Units
C/W
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(＂Miller＂) Charge Min. Typ. Max. Units 150 -2.0 -----------------0.11 ------20 --4.0 100 -100 10 100 0.075 -μA Ω Ω V V/℃ V n A
N-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=250μA ID=250μA VGS=20V VGS=-20V VDS=150V VDS=120V,TC=125℃...
