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Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν 175 C Operating Temperature ν Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ν Lower RDS(ON) : 0.161 Ω (Typ.)
o
SFH9140
BVDSS = -100 V RDS(on) = 0.2 Ω ID = -19 A
TO-3P
1 2 3
1.Gate 2. Drain 3.
SFH9140 Datasheet
