SFH9140
SFH9140 is Advanced Power MOSFET manufactured by Fairchild Semiconductor.
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν 175 C Operating Temperature ν Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ν Lower RDS(ON) : 0.161 Ω (Typ.) o
BVDSS = -100 V RDS(on) = 0.2 Ω ID = -19 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o o o
Value -100 -19 -13.3
1 O
Units V A A V m J A m J V/ns W W/ C o
-76 + _ 20 600 -19 16.6 -6.5 166 1.11
- 55 to +175
O 1 O 1 O 3 O
2 o
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.9 -40 o
Units
C/W
Electrical Characteristics (TC=25o C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller ” ) Charge Min. Typ. Max. Units -100 --2.0 ------------------0.11 ------9.7 240 83 14 22 45 26 43 7.4 17.8 ---4.0 -100 100 -10 -100 0.2 -360 125 40 55 100 60 54 --n C ns µA Ω Ω V o
P-CHANNEL POWER MOSFET
Test...
