SFU9110 Datasheet | Fairchild Semiconductor

FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ.) SFR/U9110 BVDSS = -100 V RDS(on) = 1.2 Ω ID = -2.8 A D-PAK 2 1 3 1 I-PAK 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) - o o Value -100 -2.8 -2.0 1 O Units V A A V m J A m J V/ns W W W/ C o 11 ±30 52 -2.8 2.0 -6.5 2.5 20 0.16 - 55 to +150 O 1 O 1 O 3 O Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient - Junction-to-Ambient Typ. ---Max. 6.25 50 110 o Units C/W - When mounted on the minimum pad size remended (PCB Mount). Rev. C SFR/U9110 Electrical Characteristics (TC=25o C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -100 --2.0 ------------------0.1 ------1.7 260 50 17 10 20 25 12 9 1.5 4.3 ---4.0...