SFU9130 Datasheet | Fairchild Semiconductor

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 Ω (Typ.) SFR/U9130 BVDSS = -100 V RDS(on) = 0.3 Ω ID = -9.8 A D-PAK 2 1 3 I-PAK 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) - o o Value -100 -9.8 -6.9 1 O Units V A A V m J A m J V/ns W W W/ C o 39 + _ 20 320 -9.8 5.7 -6.5 2.5 57 0.46 - 55 to +150 O 1 O 1 O 3 O Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient - Junction-to-Ambient Typ. ---Max. 2.19 50 110 o Units C/W - When mounted on the minimum pad size remended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation SFR/U9130 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -100 --2.0 ------------------0.1 ------5.2 160 60 13 22 45 25 30 5.4 12.2 ---4.0 -100 100 -10 -100 0.3 -240 90 35...