SFU9120 Datasheet | Fairchild Semiconductor

FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25o C) Continuous Drain Current (TC=100o C) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy O2 O1 O1 Peak Diode Recovery dv/dt Total Power Dissipation (TA=25o C) - Total Power Dissipation (TC=25o C) Linear Derating Factor O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = -100 V RDS(on) = 0.6 Ω ID = -4.9 A D-PAK I-PAK 2 3 1. Gate 2. Drain 3. Source Value -100 -4.9 -3.4 -20 ±30 144...