SFU9120 Datasheet PDF (Advanced Power MOSFET) | Download Fairchild Semiconductor SFU9120

SFU9120 - Advanced Power MOSFET

Features

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche E.

Datasheet Details

Part number	SFU9120
Manufacturer	Fairchild Semiconductor
File Size	218.07 KB
Description	Advanced Power MOSFET
Datasheet	SFU9120 Datasheet
Additional preview pages of the SFU9120 datasheet.

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Full PDF Text Transcription

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Advanced Power MOSFET SFR/U9120 FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.444 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy O2 O1 O1 Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) * Total Power Dissipation (TC=25oC) Linear Derating Factor O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.

Published: Apr 4, 2018 |