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SSH7N60B Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: SSH7N60B November 2001 SSH7N60B 600V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • 7.3A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
  • Low gate charge ( typical 38 nC).
  • Low Crss ( typical 23 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability G DS TO-3P SSH Series G! D ! ! #" ! ! ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current -.

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SSH7N60B Distributor