Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Features
- 7.3A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
- Low gate charge ( typical 38 nC).
- Low Crss ( typical 23 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
G DS
TO-3P
SSH Series
G!
D
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S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current -.
SSH7N60B Datasheet
