SSP5N60A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSP5N60A
Manufacturer	Fairchild Semiconductor
File Size	227.07 KB
Description	Advanced Power MOSFET
Datasheet	SSP5N60A Datasheet
Additional preview pages of the SSP5N60A datasheet.

! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max. ) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed ① Gate-to-Source Voltage Single Pulsed Avalanche Energy.

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Published: Jun 16, 2016 |