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SSP5N60C - 600V N-Channel MOSFET

Download the SSP5N60C datasheet PDF. This datasheet also covers the SSP5N60 variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially exc

Key Features

  • 4.5A,600v,RDS(on)=2.5Ω@VGS=10V.
  • Gate charge (Typical 27nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability SSP5N60/SSF5N60C General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSP5N60-SOURCESEMI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSP5N60C
Manufacturer SOURCESEMI
File Size 908.58 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSP5N60C Datasheet

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Other Datasheets by SOURCESEMI

Part Number Description
SSP5N60 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics.