SSP5N60 Datasheet | SOURCESEMI

600V N-Channel MOSFET Features - 4.5A,600v,RDS(on)=2.5Ω@VGS=10V - Gate charge (Typical 27nC) - High ruggedness - Fast switching - 100% AvalancheTested - Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and...