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SSP5N60 - 600V N-Channel MOSFET

General Description

This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially exc

Key Features

  • 4.5A,600v,RDS(on)=2.5Ω@VGS=10V.
  • Gate charge (Typical 27nC).
  • High ruggedness.
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability SSP5N60/SSF5N60C General.

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Datasheet Details

Part number SSP5N60
Manufacturer SOURCESEMI
File Size 908.58 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSP5N60 Datasheet

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Part Number Description
SSP5N60C 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics.