Datasheet Summary
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 Ω (Typ.)
SSR/U1N50A
BVDSS = 500 V RDS(on) = 5.5 Ω ID = 1.3 A
D-PAK
2 1 3 1
I-PAK
1. Gate 2. Drain 3....