SSR1N50B Datasheet 520V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the SSR1N50B datasheet PDF. This datasheet also includes the SSR-1N5 variant, as both parts are published together in a single manufacturer document.

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SSR1N50B 520v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SSR-1N5-0B.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SSR1N50B
Manufacturer	Fairchild (now onsemi)
File Size	634.92 KB
Description	520V N-Channel MOSFET
Datasheet	SSR1N50B Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Overview

SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General.

Key Features

1.3A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

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