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SSR1N50B - 520V N-Channel MOSFET

This page provides the datasheet information for the SSR1N50B, a member of the SSR-1N5 520V N-Channel MOSFET family.

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 1.3A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

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Datasheet preview – SSR1N50B

Datasheet Details

Part number SSR1N50B
Manufacturer Fairchild Semiconductor
File Size 634.92 KB
Description 520V N-Channel MOSFET
Datasheet download datasheet SSR1N50B Datasheet
Additional preview pages of the SSR1N50B datasheet.

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Full PDF Text Transcription

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SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features • • • • • • 1.3A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.
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