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SSR1N60B - 600V N-Channel MOSFET

This page provides the datasheet information for the SSR1N60B, a member of the SSR-1N6 600V N-Channel MOSFET family.

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 0.9A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous.

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Datasheet preview – SSR1N60B

Datasheet Details

Part number SSR1N60B
Manufacturer Fairchild Semiconductor
File Size 637.04 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSR1N60B Datasheet
Additional preview pages of the SSR1N60B datasheet.

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Full PDF Text Transcription

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SSR1N60B / SSU1N60B November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • 0.9A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.
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