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SSR2N60B Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the SSR2N60B datasheet PDF. This datasheet also includes the SSR-2N6 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SSR-2N6-0B.pdf) that lists specifications for multiple related part numbers.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Overview

SSR2N60B / SSU2N60B November 2001 SSR2N60B / SSU2N60B 600V N-Channel.

Key Features

  • 1.8A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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  • G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.