TIP107 Description
TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor December 2014 TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor.
TIP107 Key Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
- High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- plementary to TIP102