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TIP107 - PNP Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum).
  • Collector-Emitter Sustaining Voltage.
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use.
  • Complementary to TIP102 1 TO-220 1.Base 2.Collector 3.Emitter Equivalent Circuit C B R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP105 TIP105TU TIP107 TIP107TU Top Mark TIP105 TIP105 TIP107 TIP107 Packa.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor December 2014 TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP102 1 TO-220 1.Base 2.Collector 3.