TIP102 Datasheet | Fairchild Semiconductor

- NPN Epitaxial Silicon Darlington Transistor December 2014 TIP102 NPN Epitaxial Silicon Darlington Transistor Features - Monolithic Construction with Built-in Base-Emitter Shunt Resistors - High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - plementary to TIP107 Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP102 TIP102TU Top Mark TIP102 TIP102 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk...