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TIP102 - NPN Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum).
  • Collector-Emitter Sustaining Voltage.
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use.
  • Complementary to TIP107 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP102 TIP102TU Top Mark TIP102 TIP102 Package TO-220 3L (Single Gauge) TO-.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP102 — NPN Epitaxial Silicon Darlington Transistor December 2014 TIP102 NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP107 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP102 TIP102TU Top Mark TIP102 TIP102 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.