TIP102 Description
TIP102 NPN Epitaxial Silicon Darlington Transistor December 2014 TIP102 NPN Epitaxial Silicon Darlington Transistor.
TIP102 Key Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
- High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- plementary to TIP107