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MPSH11 / MMBTH11
Discrete POWER & Signal Technologies
MPSH11
MMBTH11
C
E C BE
TO-92 SOT-23
Mark: 3G
B
NPN RF Transistor
This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25 30 3.
MMBTH11 Datasheet
