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NDP603AL Datasheet N-channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect.

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. ______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherw.

More Datasheets from Fairchild (now onsemi)

Part Number Description
NDP6030 N-Channel Enhancement Mode Field Effect Transistor
NDP6030 N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6050 N-Channel Enhancement Mode Field Effect Transistor
NDP6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6051 N-Channel Enhancement Mode Field Effect Transistor

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