NDP603AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Datasheet Details

Part number	NDP603AL
Manufacturer	Fairchild
File Size	65.70 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDP603AL Datasheet
Additional preview pages of the NDP603AL datasheet.

Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. ______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherw.

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Published: May 12, 2005 |