NDS332P Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management, portable electronics, and other battery powered circuits where fast...
NDS332P Key Features
- 1 A, -20 V, RDS(ON) = 0.41 Ω @ VGS= -2.7 V RDS(ON) = 0.3 Ω @ VGS = -4.5 V