NDS335N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Datasheet Details

Part number	NDS335N
Manufacturer	Fairchild
File Size	59.51 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDS335N Datasheet
Additional preview pages of the NDS335N datasheet.

Product details

Description

These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V RDS(ON) = 0.11 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source.

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Published: May 12, 2005 |