NDS336P - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Datasheet Details

Part number	NDS336P
Manufacturer	Fairchild
File Size	77.51 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDS336P Datasheet
Additional preview pages of the NDS336P datasheet.

Product details

Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-1.2 A, -20 V, RDS(ON) = 0.27 Ω @ VGS= -2.7 V RDS(ON) = 0.2 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface package. Mount ______________________________________________________.

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Published: May 12, 2005 |