Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- 1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V RDS(ON) = 250 mΩ @ VGS = 4.5 V.
- Ultra-Low gate charge.
- Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
- High performance trench technology for extremely low RDS(ON)
DD
SuperSOTTM-3
G
S
Absolute Maximum Ratings TA=25oC unless otherwise not.