Kexin Electronics NDS352AP
P-Channel MOSFET
| Part No. | NDS352AP |
|---|---|
| Datasheet | NDS352AP Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-30V● ID =-0.9 A (VGS =-4.5V)
● RDS(ON) ＜ 0.3Ω (VGS =-10V)
● RDS(ON) ＜ 0.5Ω (VGS =-4.5V) D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.Source 3.Drain
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Note.1: 250℃/W when mounted on a 0.02 in 2 pad of 2oz copper. Note.2: 270℃/W when mounted on a 0.001 in 2 pad of 2oz copper. Rating -30 ±20 -0.9 -10 0.5 0.46 250 75 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET P-Channel MOSFET NDS352AP (KDS352AP)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Vo...
