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NDS352AP - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-0.9 A (VGS =-4.5V).
  • RDS(ON) ＜ 0.3Ω (VGS =-10V).
  • RDS(ON) ＜ 0.5Ω (VGS =-4.5V) D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.Source 3.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation.

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SMD Type P-Channel MOSFET NDS352AP (KDS352AP) MOSFET ■ Features ● VDS (V) =-30V ● ID =-0.9 A (VGS =-4.5V) ● RDS(ON) ＜ 0.3Ω (VGS =-10V) ● RDS(ON) ＜ 0.5Ω (VGS =-4.5V) D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.Source 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Note.1: 250℃/W when mounted on a 0.