NDS352AP Description
These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management, portable electronics, and other battery powered circuits where fast...
NDS352AP Key Features
- 0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V RDS(ON) = 0.3 Ω @ VGS = -10 V. Industry standard outline SOT-23 surface mou