NDS352AP Datasheet | Fairchild Semiconductor

February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features -0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V...