| Part Number | NDS352AP Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET NDS352AP (KDS352AP)
MOSFET
■ Features
● VDS (V) =-30V
● ID =-0.9 A (VGS =-4.5V)
● RDS(ON) ＜ 0.3Ω (VGS =-10V)
● RDS(ON) ＜ 0.5Ω (VGS =-4.5V)
D
G
S
+0.2 2.8 -0.1
SOT.
* VDS (V) =-30V * ID =-0.9 A (VGS =-4.5V) * RDS(ON) ＜ 0.3Ω (VGS =-10V) * RDS(ON) ＜ 0.5Ω (VGS =-4.5V) D G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gat. |
NDS352AP Datasheet and Specifications PDF
The NDS352AP is a P-Channel MOSFET.
Key Specifications
| Package | TO-236-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 1.22 mm |
| Width | 3.05 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | NDS352AP Datasheet |
|---|---|
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especiall. -0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V RDS(ON) = 0.3 Ω @ VGS = -10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance an. |