NDS356AP Datasheet | Fairchild Semiconductor

September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features -1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V...