NDS356P - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Datasheet Details

Part number	NDS356P
Manufacturer	Fairchild
File Size	78.03 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDS356P Datasheet
Additional preview pages of the NDS356P datasheet.

Product details

Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-1.1 A, -20V. RDS(ON) = 0.3Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage T A = 2.

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Published: May 12, 2005 |