NDS356P Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management, portable electronics, and other battery powered circuits where fast...
NDS356P Key Features
- 1.1 A, -20V. RDS(ON) = 0.3Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and e