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NDS356P Datasheet P-channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect.

General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • -1.1 A, -20V. RDS(ON) = 0.3Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage T A = 2.

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