Part NDS355AN
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Category Transistor
Manufacturer onsemi
Size 464.66 KB
onsemi

NDS355AN Overview

Key Features

  • This very high density process is especially tailored to minimize on-state resistance
  • 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • Compact industry standard SOT-23 surface mount package
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